Warranty: |
5 Years - Samsung |
Interface: |
PCIe Gen 3.0 x4, NVMe 1.2b |
Lithograph: |
Samsung V-NAND 3-bit MLC |
Form Factor: |
M.2, 22110 |
Drive Capacity: |
1.9TB |
Max Seq. Read: |
3,000 MB/s |
Max Seq. Write: |
1,430 MB/s |
Read IOPs: |
Up to 480,000 (4KB, QD32) |
Write IOPs: |
Up to 42,000 (4KB, QD32) |
Power Consumption: |
8W Write, 7.6W Read, 2.6W Idle |
MTBF Rating: |
2,000,000 Hours |
Endurance Rating: |
2.8PB |
MFG Part Number: |
MZ-1LB1T9NE |
Advanced ECC Engine and End-to-End Data Protection
Detect signal discrepancies and proactively remedy them in real time with the Error Correcting Code (ECC) engine. Secure data without performance degradation thanks to AES 256-bit encryption.
Power-Loss Protection
Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.