Warranty: |
5 Years - Samsung |
Interface: |
PCIe Gen 3.0 x4, NVMe 1.2b |
Lithograph: |
Samsung V-NAND 3-bit MLC |
Form Factor: |
2.5" |
Drive Capacity: |
1.9TB |
Drive Cache: |
Samsung 3GB Low Power DDR4 SDRAM |
Max Seq. Read: |
3,400 MB/s |
Max Seq. Write: |
2,200 MB/s |
Read IOPs: |
Up to 580,000 |
Write IOPs: |
Up to 52,000 |
Power Consumption: |
Active (Read/Write): 8.7 W / 10.6 W, Idle: Max. 4.0 W |
MTBF Rating: |
2,000,000 Hours |
Endurance Rating: |
2.733 PBW |
MFG Part Number: |
MZ-QLB1T9NE |
Advanced ECC Engine and End-to-End Data Protection
Detect signal discrepancies and proactively remedy them in real time with the Error Correcting Code (ECC) engine. Secure data without performance degradation thanks to AES 256-bit encryption.
Power-Loss Protection
Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.